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Publications tagged with this subject: 34

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1. Annealing effect on ferromagnetic properties, hole concentration and electronic band structure of GaMnAs epitaxial layers

2. Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on Cd x Hg1–x Te Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates

3. Influence of Defects and Transition Elements in Substrates Of Semi-Insulating Gaas on Optical Properties of Algaas/Gaas Quantum-Well Structures

4. Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy

5. Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy

6. Overcoming Etch Challenges on a 6″ Hg1−x Cd x Te MBE on Si Wafer

7. Room-temperature metal–insulator transition of MBE grown VO2 film investigated by temperature dependent resistance and transmittance

8. Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

9. In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of Ga2O3 Films Grown by Plasma-Assisted Molecular Beam Epitaxy

10. Study of the features of BaF2 heteroepitaxy on CaF2/Si(100) layers obtained in the high-temperature growth mode

11. Two-carrier transport in SrMnBi2 thin films

12. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

13. Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

14. Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency

15. Estimation of total solar radiation using RadEst 3.00 software at Jumla, Nepal

16. The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates

17. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

18. Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

19. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

20. Polarized XAFS Analyses for MgB2 Thin Films

21. Growth and Characterization of Sn Doped β-Ga2O3 Thin Films and Enhanced Performance in a Solar-Blind Photodetector

22. Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

23. Molecular beam epitaxy of BaF2/CaF2 buffer layers on the Si(100) substrate for monolithic photoreceivers

24. A stochastic model of nanowire growth by molecular beam epitaxy

25. Development of a high-voltage waveguide photodetector comprised of Schottky diodes and based on the Ge–Si structure with Ge quantum dots for portable thermophotovoltaic converters

26. Comparison of GaAs photocathode grown by MOCVD and MBE: a first-principle and experimental research

27. Effect of Au thickness on AuAg bimetallic growth on reconstructed Si(5 5 12) surfaces

28. Heterostructures with CdTe/ZnTe quantum dots for single photon emitters grown by molecular beam epitaxy

29. Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy

30. Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures

31. Growth of Y3Fe5O12/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties

32. Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode

33. Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe

34. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN


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